FQB25N33TM-F085 by onsemi – Specifications

onsemi FQB25N33TM-F085 is a FQB25N33TM-F085 from onsemi, part of the MOSFETs. It is designed for 330V 25A 230mΩ@12.5A,10V 5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 330V
  • Continuous Drain Current (Id): 25A
  • Power Dissipation (Pd): 3.1W;250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@12.5A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.01nF@25V
  • Total Gate Charge (Qg@Vgs): 75nC@15V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of FQB25N33TM-F085

Model NumberFQB25N33TM-F085
Model Nameonsemi FQB25N33TM-F085
CategoryMOSFETs
Brandonsemi
Description330V 25A 230mΩ@12.5A,10V 5V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)330V
Continuous Drain Current (Id)25A
Power Dissipation (Pd)3.1W;250W
Drain Source On Resistance (RDS(on)@Vgs,Id)230mΩ@12.5A,10V
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.01nF@25V
Total Gate Charge (Qg@Vgs)75nC@15V
Operating Temperature-55℃~+150℃@(Tj)

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