onsemi FQB33N10LTM is a FQB33N10LTM from onsemi, part of the MOSFETs. It is designed for 100V 33A 39mΩ@10V,16.5A 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 33A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 39mΩ@10V,16.5A
- Power Dissipation (Pd): 3.75W;127W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 70pF@25V
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.25nF@25V
- Total Gate Charge (Qg@Vgs): 30nC@5V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.27 grams.
More on FQB33N10LTM
Full Specifications of FQB33N10LTM
| Model Number | FQB33N10LTM |
| Model Name | onsemi FQB33N10LTM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 33A 39mΩ@10V,16.5A 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.270 grams / 0.080072 oz |
| Package / Case | D2PAK |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 33A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 39mΩ@10V,16.5A |
| Power Dissipation (Pd) | 3.75W;127W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF@25V |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.25nF@25V |
| Total Gate Charge (Qg@Vgs) | 30nC@5V |
| Operating Temperature | -55℃~+175℃@(Tj) |