onsemi FQB5N50CTM is a FQB5N50CTM from onsemi, part of the MOSFETs. It is designed for 500V 5A 1.4Ω@10V,2.5A 73W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,2.5A
- Power Dissipation (Pd): 73W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 625pF@25V
- Total Gate Charge (Qg@Vgs): 24nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.662 grams.
More on FQB5N50CTM
Full Specifications of FQB5N50CTM
Model Number | FQB5N50CTM |
Model Name | onsemi FQB5N50CTM |
Category | MOSFETs |
Brand | onsemi |
Description | 500V 5A 1.4Ω@10V,2.5A 73W 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.662 grams / 0.058625 oz |
Package / Case | D2PAK(TO-263) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 500V |
Continuous Drain Current (Id) | 5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4Ω@10V,2.5A |
Power Dissipation (Pd) | 73W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 625pF@25V |
Total Gate Charge (Qg@Vgs) | 24nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |