onsemi FQB7N65CTM is a FQB7N65CTM from onsemi, part of the MOSFETs. It is designed for 650V 7A 173W 1.4Ω@3.5A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 7A
- Power Dissipation (Pd): 173W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@3.5A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.245nF@25V
- Total Gate Charge (Qg@Vgs): 36nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQB7N65CTM
| Model Number | FQB7N65CTM |
| Model Name | onsemi FQB7N65CTM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 650V 7A 173W 1.4Ω@3.5A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | D2PAK(TO-263) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 7A |
| Power Dissipation (Pd) | 173W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4Ω@3.5A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.245nF@25V |
| Total Gate Charge (Qg@Vgs) | 36nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |