onsemi FQB8N60CTM is a FQB8N60CTM from onsemi, part of the MOSFETs. It is designed for 600V 7.5A 1.2Ω@10V,3.75A 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 7.5A
- Power Dissipation (Pd): 3.13W;147W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,3.75A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.255nF@25V
- Total Gate Charge (Qg@Vgs): 36nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.662 grams.
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Full Specifications of FQB8N60CTM
| Model Number | FQB8N60CTM |
| Model Name | onsemi FQB8N60CTM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 7.5A 1.2Ω@10V,3.75A 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.662 grams / 0.058625 oz |
| Package / Case | D2PAK |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 7.5A |
| Power Dissipation (Pd) | 3.13W;147W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.2Ω@10V,3.75A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.255nF@25V |
| Total Gate Charge (Qg@Vgs) | 36nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |