FQB9N50CTM by onsemi – Specifications

onsemi FQB9N50CTM is a FQB9N50CTM from onsemi, part of the MOSFETs. It is designed for 500V 9A 800mΩ@10V,4.5A 135W 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@10V,4.5A
  • Power Dissipation (Pd): 135W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.665 grams.

More on FQB9N50CTM

Full Specifications of FQB9N50CTM

Model NumberFQB9N50CTM
Model Nameonsemi FQB9N50CTM
CategoryMOSFETs
Brandonsemi
Description500V 9A 800mΩ@10V,4.5A 135W 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.665 grams / 0.058731 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)9A
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@10V,4.5A
Power Dissipation (Pd)135W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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