onsemi FQD10N20LTM is a FQD10N20LTM from onsemi, part of the MOSFETs. It is designed for 200V 7.6A 360mΩ@3.8A,10V 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 7.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@3.8A,10V
- Power Dissipation (Pd): 2.5W;51W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 830pF@25V
- Total Gate Charge (Qg@Vgs): 17nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.45 grams.
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Full Specifications of FQD10N20LTM
| Model Number | FQD10N20LTM |
| Model Name | onsemi FQD10N20LTM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 200V 7.6A 360mΩ@3.8A,10V 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.450 grams / 0.015873 oz |
| Package / Case | DPAK |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 7.6A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 360mΩ@3.8A,10V |
| Power Dissipation (Pd) | 2.5W;51W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 830pF@25V |
| Total Gate Charge (Qg@Vgs) | 17nC@5V |
| Operating Temperature | -55℃~+150℃@(Tj) |