onsemi FQD24N08TF is a FQD24N08TF from onsemi, part of the MOSFETs. It is designed for 80V 19.6A 60mΩ@9.8A,10V 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 19.6A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@9.8A,10V
- Power Dissipation (Pd): 2.5W;50W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 750pF@25V
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQD24N08TF
Model Number | FQD24N08TF |
Model Name | onsemi FQD24N08TF |
Category | MOSFETs |
Brand | onsemi |
Description | 80V 19.6A 60mΩ@9.8A,10V 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252(DPAK) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 80V |
Continuous Drain Current (Id) | 19.6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 60mΩ@9.8A,10V |
Power Dissipation (Pd) | 2.5W;50W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 750pF@25V |
Total Gate Charge (Qg@Vgs) | 25nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |