FQD3N50CTF by onsemi – Specifications

onsemi FQD3N50CTF is a FQD3N50CTF from onsemi, part of the MOSFETs. It is designed for 500V 2.5A 2.5Ω@1.25A,10V 35W 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 2.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@1.25A,10V
  • Power Dissipation (Pd): 35W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 365pF@25V
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of FQD3N50CTF

Model NumberFQD3N50CTF
Model Nameonsemi FQD3N50CTF
CategoryMOSFETs
Brandonsemi
Description500V 2.5A 2.5Ω@1.25A,10V 35W 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)2.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.5Ω@1.25A,10V
Power Dissipation (Pd)35W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)365pF@25V
Total Gate Charge (Qg@Vgs)13nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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