onsemi FQD3N50CTF is a FQD3N50CTF from onsemi, part of the MOSFETs. It is designed for 500V 2.5A 2.5Ω@1.25A,10V 35W 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 2.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@1.25A,10V
- Power Dissipation (Pd): 35W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 365pF@25V
- Total Gate Charge (Qg@Vgs): 13nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQD3N50CTF
Model Number | FQD3N50CTF |
Model Name | onsemi FQD3N50CTF |
Category | MOSFETs |
Brand | onsemi |
Description | 500V 2.5A 2.5Ω@1.25A,10V 35W 4V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252(DPAK) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 500V |
Continuous Drain Current (Id) | 2.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.5Ω@1.25A,10V |
Power Dissipation (Pd) | 35W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 365pF@25V |
Total Gate Charge (Qg@Vgs) | 13nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |