onsemi FQD5N30TM is a FQD5N30TM from onsemi, part of the MOSFETs. It is designed for 300V 4.4A 900mΩ@2.2A,10V 5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 300V
- Continuous Drain Current (Id): 4.4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 900mΩ@2.2A,10V
- Power Dissipation (Pd): 2.5W;45W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 430pF@25V
- Total Gate Charge (Qg@Vgs): 13nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQD5N30TM
Model Number | FQD5N30TM |
Model Name | onsemi FQD5N30TM |
Category | MOSFETs |
Brand | onsemi |
Description | 300V 4.4A 900mΩ@2.2A,10V 5V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252(DPAK) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 300V |
Continuous Drain Current (Id) | 4.4A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 900mΩ@2.2A,10V |
Power Dissipation (Pd) | 2.5W;45W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 430pF@25V |
Total Gate Charge (Qg@Vgs) | 13nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |