onsemi FQH35N40 is a FQH35N40 from onsemi, part of the MOSFETs. It is designed for 400V 35A 105mΩ@17.5A,10V 310W 5V@250uA 1PCSNChannel TO-247AD MOSFETs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 400V
- Continuous Drain Current (Id): 35A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 105mΩ@17.5A,10V
- Power Dissipation (Pd): 310W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 5.6nF@25V
- Total Gate Charge (Qg@Vgs): 140nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FQH35N40
Full Specifications of FQH35N40
Model Number | FQH35N40 |
Model Name | onsemi FQH35N40 |
Category | MOSFETs |
Brand | onsemi |
Description | 400V 35A 105mΩ@17.5A,10V 310W 5V@250uA 1PCSNChannel TO-247AD MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-247AD |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 400V |
Continuous Drain Current (Id) | 35A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 105mΩ@17.5A,10V |
Power Dissipation (Pd) | 310W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 5.6nF@25V |
Total Gate Charge (Qg@Vgs) | 140nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |