onsemi FQI4N25TU is a FQI4N25TU from onsemi, part of the MOSFETs. It is designed for 250V 3.6A 1.75Ω@1.8A,10V 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS. This product comes in a I2PAK(TO-262) package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 250V
- Continuous Drain Current (Id): 3.6A
- Power Dissipation (Pd): 3.13W;52W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.75Ω@1.8A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 200pF@25V
- Total Gate Charge (Qg@Vgs): 5.6nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQI4N25TU
| Model Number | FQI4N25TU |
| Model Name | onsemi FQI4N25TU |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 250V 3.6A 1.75Ω@1.8A,10V 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | I2PAK(TO-262) |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 250V |
| Continuous Drain Current (Id) | 3.6A |
| Power Dissipation (Pd) | 3.13W;52W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.75Ω@1.8A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 200pF@25V |
| Total Gate Charge (Qg@Vgs) | 5.6nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |