onsemi FQP19N10L is a FQP19N10L from onsemi, part of the MOSFETs. It is designed for 100V 19A 100mΩ@9.5A,10V 75W 2V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 19A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@9.5A,10V
- Power Dissipation (Pd): 75W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 870pF@25V
- Total Gate Charge (Qg@Vgs): 18nC@5V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.
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Full Specifications of FQP19N10L
| Model Number | FQP19N10L |
| Model Name | onsemi FQP19N10L |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 19A 100mΩ@9.5A,10V 75W 2V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.680 grams / 0.094534 oz |
| Package / Case | TO-220-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 19A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 100mΩ@9.5A,10V |
| Power Dissipation (Pd) | 75W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 870pF@25V |
| Total Gate Charge (Qg@Vgs) | 18nC@5V |
| Operating Temperature | -55℃~+175℃@(Tj) |