onsemi FQP2N90 is a FQP2N90 from onsemi, part of the MOSFETs. It is designed for 900V 2.2A 85W 7.2Ω@10V,1.1A 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 900V
- Continuous Drain Current (Id): 2.2A
- Power Dissipation (Pd): 85W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2Ω@10V,1.1A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 500pF@25V
- Total Gate Charge (Qg@Vgs): 15nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.16 grams.
More on FQP2N90
Full Specifications of FQP2N90
| Model Number | FQP2N90 |
| Model Name | onsemi FQP2N90 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 900V 2.2A 85W 7.2Ω@10V,1.1A 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.160 grams / 0.076192 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 900V |
| Continuous Drain Current (Id) | 2.2A |
| Power Dissipation (Pd) | 85W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.2Ω@10V,1.1A |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 500pF@25V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |