onsemi FQP3N80C is a FQP3N80C from onsemi, part of the MOSFETs. It is designed for 800V 3A 4.8Ω@1.5A,10V 107W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 3A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.8Ω@1.5A,10V
- Power Dissipation (Pd): 107W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 705pF@25V
- Total Gate Charge (Qg@Vgs): 16.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.95 grams.
More on FQP3N80C
Full Specifications of FQP3N80C
| Model Number | FQP3N80C |
| Model Name | onsemi FQP3N80C |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 800V 3A 4.8Ω@1.5A,10V 107W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.950 grams / 0.104058 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 800V |
| Continuous Drain Current (Id) | 3A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.8Ω@1.5A,10V |
| Power Dissipation (Pd) | 107W |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 705pF@25V |
| Total Gate Charge (Qg@Vgs) | 16.5nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |