onsemi FQP7N65C is a FQP7N65C from onsemi, part of the MOSFETs. It is designed for 650V 7A 160W 1.4Ω@3.5A,10V 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 7A
- Power Dissipation (Pd): 160W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@3.5A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.245nF@25V
- Total Gate Charge (Qg@Vgs): 36nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.
More on FQP7N65C
Full Specifications of FQP7N65C
Model Number | FQP7N65C |
Model Name | onsemi FQP7N65C |
Category | MOSFETs |
Brand | onsemi |
Description | 650V 7A 160W 1.4Ω@3.5A,10V 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.680 grams / 0.094534 oz |
Package / Case | TO-220-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 7A |
Power Dissipation (Pd) | 160W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4Ω@3.5A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.245nF@25V |
Total Gate Charge (Qg@Vgs) | 36nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |