onsemi FQP8N60C is a FQP8N60C from onsemi, part of the MOSFETs. It is designed for 600V 7.5A 147W 1.2Ω@10V,3.75A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 7.5A
- Power Dissipation (Pd): 147W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,3.75A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.255nF@25V
- Total Gate Charge (Qg@Vgs): 36nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.16 grams.
More on FQP8N60C
Full Specifications of FQP8N60C
| Model Number | FQP8N60C |
| Model Name | onsemi FQP8N60C |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 7.5A 147W 1.2Ω@10V,3.75A 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.160 grams / 0.076192 oz |
| Package / Case | TO-220 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 7.5A |
| Power Dissipation (Pd) | 147W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.2Ω@10V,3.75A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.255nF@25V |
| Total Gate Charge (Qg@Vgs) | 36nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |