onsemi FQP9N90C is a FQP9N90C from onsemi, part of the MOSFETs. It is designed for 900V 8A 1.4Ω@10V,4A 205W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 900V
- Continuous Drain Current (Id): 8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@10V,4A
- Power Dissipation (Pd): 205W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.73nF@25V
- Total Gate Charge (Qg@Vgs): 58nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.76 grams.
More on FQP9N90C
Full Specifications of FQP9N90C
Model Number | FQP9N90C |
Model Name | onsemi FQP9N90C |
Category | MOSFETs |
Brand | onsemi |
Description | 900V 8A 1.4Ω@10V,4A 205W 5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.760 grams / 0.097356 oz |
Package / Case | TO-220 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 900V |
Continuous Drain Current (Id) | 8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4Ω@10V,4A |
Power Dissipation (Pd) | 205W |
Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.73nF@25V |
Total Gate Charge (Qg@Vgs) | 58nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |