FQPF2N60C by onsemi – Specifications

onsemi FQPF2N60C is a FQPF2N60C from onsemi, part of the MOSFETs. It is designed for 600V 2A 4.7Ω@10V,1A 23W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7Ω@10V,1A
  • Power Dissipation (Pd): 23W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 235pF@25V
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.89 grams.

More on FQPF2N60C

Full Specifications of FQPF2N60C

Model NumberFQPF2N60C
Model Nameonsemi FQPF2N60C
CategoryMOSFETs
Brandonsemi
Description600V 2A 4.7Ω@10V,1A 23W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.890 grams / 0.101942 oz
Package / CaseTO-220F-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)2A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.7Ω@10V,1A
Power Dissipation (Pd)23W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)235pF@25V
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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