onsemi FQPF5N15 is a FQPF5N15 from onsemi, part of the MOSFETs. It is designed for 150V 4.2A 800mΩ@2.1A,10V 32W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 4.2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@2.1A,10V
- Power Dissipation (Pd): 32W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 230pF@25V
- Total Gate Charge (Qg@Vgs): 7nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FQPF5N15
Full Specifications of FQPF5N15
Model Number | FQPF5N15 |
Model Name | onsemi FQPF5N15 |
Category | MOSFETs |
Brand | onsemi |
Description | 150V 4.2A 800mΩ@2.1A,10V 32W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220F-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 150V |
Continuous Drain Current (Id) | 4.2A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 800mΩ@2.1A,10V |
Power Dissipation (Pd) | 32W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 230pF@25V |
Total Gate Charge (Qg@Vgs) | 7nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |