onsemi FQPF70N10 is a FQPF70N10 from onsemi, part of the MOSFETs. It is designed for 100V 35A 23mΩ@10V,17.5A 62W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 35A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@10V,17.5A
- Power Dissipation (Pd): 62W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.3nF@25V
- Total Gate Charge (Qg@Vgs): 110nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.051 grams.
More on FQPF70N10
Full Specifications of FQPF70N10
| Model Number | FQPF70N10 |
| Model Name | onsemi FQPF70N10 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 35A 23mΩ@10V,17.5A 62W 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 3.051 grams / 0.107621 oz |
| Package / Case | TO-220F-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 35A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 23mΩ@10V,17.5A |
| Power Dissipation (Pd) | 62W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 3.3nF@25V |
| Total Gate Charge (Qg@Vgs) | 110nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |