onsemi FQT1N60CTF-WS is a FQT1N60CTF-WS from onsemi, part of the MOSFETs. It is designed for 600V 200mA 11.5Ω@10V,100mA 2.1W 4V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 200mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11.5Ω@10V,100mA
- Power Dissipation (Pd): 2.1W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 170pF@25V
- Total Gate Charge (Qg@Vgs): 6.2nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.202 grams.
More on FQT1N60CTF-WS
Full Specifications of FQT1N60CTF-WS
| Model Number | FQT1N60CTF-WS |
| Model Name | onsemi FQT1N60CTF-WS |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 600V 200mA 11.5Ω@10V,100mA 2.1W 4V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.202 grams / 0.007125 oz |
| Package / Case | SOT-223-4 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 600V |
| Continuous Drain Current (Id) | 200mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 11.5Ω@10V,100mA |
| Power Dissipation (Pd) | 2.1W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 170pF@25V |
| Total Gate Charge (Qg@Vgs) | 6.2nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |