FQU10N20LTU by onsemi – Specifications

onsemi FQU10N20LTU is a FQU10N20LTU from onsemi, part of the MOSFETs. It is designed for 200V 7.6A 360mΩ@3.8A,10V 2V@250uA 1PCSNChannel IPAK MOSFETs ROHS. This product comes in a IPAK package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 7.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@3.8A,10V
  • Power Dissipation (Pd): 2.5W;51W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 830pF@25V
  • Total Gate Charge (Qg@Vgs): 17nC@5V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FQU10N20LTU

Full Specifications of FQU10N20LTU

Model NumberFQU10N20LTU
Model Nameonsemi FQU10N20LTU
CategoryMOSFETs
Brandonsemi
Description200V 7.6A 360mΩ@3.8A,10V 2V@250uA 1PCSNChannel IPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseIPAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)7.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)360mΩ@3.8A,10V
Power Dissipation (Pd)2.5W;51W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)830pF@25V
Total Gate Charge (Qg@Vgs)17nC@5V
Operating Temperature-55℃~+150℃@(Tj)

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