onsemi FQU11P06TU is a FQU11P06TU from onsemi, part of the MOSFETs. It is designed for 60V 9.4A 150mΩ@10V,4.7A 38W 4V@250uA 1PCSPChannel IPAK MOSFETs ROHS. This product comes in a IPAK package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 9.4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@10V,4.7A
- Power Dissipation (Pd): 38W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 45pF@25V
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 420pF@25V
- Total Gate Charge (Qg@Vgs): 13nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQU11P06TU
| Model Number | FQU11P06TU |
| Model Name | onsemi FQU11P06TU |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 60V 9.4A 150mΩ@10V,4.7A 38W 4V@250uA 1PCSPChannel IPAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | IPAK |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 9.4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 150mΩ@10V,4.7A |
| Power Dissipation (Pd) | 38W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF@25V |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 420pF@25V |
| Total Gate Charge (Qg@Vgs) | 13nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |