onsemi FQU2N90TU is a FQU2N90TU from onsemi, part of the MOSFETs. It is designed for 900V 1.7A 7.2Ω@850mA,10V 5V@250uA 1PCSNChannel IPAK MOSFETs ROHS. This product comes in a IPAK package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 900V
- Continuous Drain Current (Id): 1.7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2Ω@850mA,10V
- Power Dissipation (Pd): 2.5W;50W
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 500pF@25V
- Total Gate Charge (Qg@Vgs): 15nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of FQU2N90TU
| Model Number | FQU2N90TU |
| Model Name | onsemi FQU2N90TU |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 900V 1.7A 7.2Ω@850mA,10V 5V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | IPAK |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 900V |
| Continuous Drain Current (Id) | 1.7A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 7.2Ω@850mA,10V |
| Power Dissipation (Pd) | 2.5W;50W |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 500pF@25V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |