onsemi HUF75925P3 is a HUF75925P3 from onsemi, part of the MOSFETs. It is designed for 200V 11A 275mΩ@11A,10V 100W 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 11A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 275mΩ@11A,10V
- Power Dissipation (Pd): 100W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.03nF@25V
- Total Gate Charge (Qg@Vgs): 78nC@20V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.
More on HUF75925P3
Full Specifications of HUF75925P3
| Model Number | HUF75925P3 |
| Model Name | onsemi HUF75925P3 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 200V 11A 275mΩ@11A,10V 100W 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.680 grams / 0.094534 oz |
| Package / Case | TO-220-3 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 11A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 275mΩ@11A,10V |
| Power Dissipation (Pd) | 100W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.03nF@25V |
| Total Gate Charge (Qg@Vgs) | 78nC@20V |
| Operating Temperature | -55℃~+175℃@(Tj) |
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