HUF76645S3S by onsemi – Specifications

onsemi HUF76645S3S is a HUF76645S3S from onsemi, part of the MOSFETs. It is designed for 100V 75A 14mΩ@75A,10V 310W 3V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 75A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@75A,10V
  • Power Dissipation (Pd): 310W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.4nF@25V
  • Total Gate Charge (Qg@Vgs): 153nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of HUF76645S3S

Model NumberHUF76645S3S
Model Nameonsemi HUF76645S3S
CategoryMOSFETs
Brandonsemi
Description100V 75A 14mΩ@75A,10V 310W 3V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)75A
Drain Source On Resistance (RDS(on)@Vgs,Id)14mΩ@75A,10V
Power Dissipation (Pd)310W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.4nF@25V
Total Gate Charge (Qg@Vgs)153nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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