HUFA76419D3S by onsemi – Specifications

onsemi HUFA76419D3S is a HUFA76419D3S from onsemi, part of the MOSFETs. It is designed for 60V 20A 75W 37mΩ@20A,10V 3V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 20A
  • Power Dissipation (Pd): 75W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 37mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 900pF@25V
  • Total Gate Charge (Qg@Vgs): 27.5nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of HUFA76419D3S

Model NumberHUFA76419D3S
Model Nameonsemi HUFA76419D3S
CategoryMOSFETs
Brandonsemi
Description60V 20A 75W 37mΩ@20A,10V 3V@250uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252(DPAK)
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)20A
Power Dissipation (Pd)75W
Drain Source On Resistance (RDS(on)@Vgs,Id)37mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)900pF@25V
Total Gate Charge (Qg@Vgs)27.5nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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