IRF634B-FP001 by onsemi – Specifications

onsemi IRF634B-FP001 is a IRF634B-FP001 from onsemi, part of the MOSFETs. It is designed for 250V 8.1A 74W 450mΩ@4.05A,10V 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 8.1A
  • Power Dissipation (Pd): 74W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 450mΩ@4.05A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1nF@25V
  • Total Gate Charge (Qg@Vgs): 38nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.68 grams.

Full Specifications of IRF634B-FP001

Model NumberIRF634B-FP001
Model Nameonsemi IRF634B-FP001
CategoryMOSFETs
Brandonsemi
Description250V 8.1A 74W 450mΩ@4.05A,10V 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.680 grams / 0.094534 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)8.1A
Power Dissipation (Pd)74W
Drain Source On Resistance (RDS(on)@Vgs,Id)450mΩ@4.05A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1nF@25V
Total Gate Charge (Qg@Vgs)38nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare onsemi - IRF634B-FP001 With Other 200 Models

Related Models - IRF634B-FP001 Alternative

Scroll to Top