IRFI840BTU by onsemi – Specifications

onsemi IRFI840BTU is a IRFI840BTU from onsemi, part of the MOSFETs. It is designed for 500V 8A 800mΩ@4A,10V 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS. This product comes in a I2PAK(TO-262) package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@4A,10V
  • Power Dissipation (Pd): 3.13W;134W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.8nF@25V
  • Total Gate Charge (Qg@Vgs): 53nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRFI840BTU

Model NumberIRFI840BTU
Model Nameonsemi IRFI840BTU
CategoryMOSFETs
Brandonsemi
Description500V 8A 800mΩ@4A,10V 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseI2PAK(TO-262)
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@4A,10V
Power Dissipation (Pd)3.13W;134W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.8nF@25V
Total Gate Charge (Qg@Vgs)53nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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