onsemi IRFI840BTU is a IRFI840BTU from onsemi, part of the MOSFETs. It is designed for 500V 8A 800mΩ@4A,10V 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS. This product comes in a I2PAK(TO-262) package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@4A,10V
- Power Dissipation (Pd): 3.13W;134W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.8nF@25V
- Total Gate Charge (Qg@Vgs): 53nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRFI840BTU
Full Specifications of IRFI840BTU
Model Number | IRFI840BTU |
Model Name | onsemi IRFI840BTU |
Category | MOSFETs |
Brand | onsemi |
Description | 500V 8A 800mΩ@4A,10V 4V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | I2PAK(TO-262) |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 500V |
Continuous Drain Current (Id) | 8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 800mΩ@4A,10V |
Power Dissipation (Pd) | 3.13W;134W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.8nF@25V |
Total Gate Charge (Qg@Vgs) | 53nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |