IRFNL210BTA-FP001 by onsemi – Specifications

onsemi IRFNL210BTA-FP001 is a IRFNL210BTA-FP001 from onsemi, part of the MOSFETs. It is designed for 200V 1A 3.1W 1.5Ω@500mA,10V 4V@250uA 1PCSNChannel TO-92L MOSFETs ROHS. This product comes in a TO-92L package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 1A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@500mA,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 225pF@25V
  • Total Gate Charge (Qg@Vgs): 9.3nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRFNL210BTA-FP001

Model NumberIRFNL210BTA-FP001
Model Nameonsemi IRFNL210BTA-FP001
CategoryMOSFETs
Brandonsemi
Description200V 1A 3.1W 1.5Ω@500mA,10V 4V@250uA 1PCSNChannel TO-92L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-92L
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)1A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5Ω@500mA,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)225pF@25V
Total Gate Charge (Qg@Vgs)9.3nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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