onsemi IRFW530ATM is a IRFW530ATM from onsemi, part of the MOSFETs. It is designed for 100V 14A 110mΩ@7A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 14A
- Power Dissipation (Pd): 3.8W;55W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@7A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 790pF@25V
- Total Gate Charge (Qg@Vgs): 36nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.86 grams.
More on IRFW530ATM
Full Specifications of IRFW530ATM
| Model Number | IRFW530ATM |
| Model Name | onsemi IRFW530ATM |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 100V 14A 110mΩ@7A,10V 4V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.860 grams / 0.06561 oz |
| Package / Case | D2PAK |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 14A |
| Power Dissipation (Pd) | 3.8W;55W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mΩ@7A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 790pF@25V |
| Total Gate Charge (Qg@Vgs) | 36nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |