MBRD835LT4G by onsemi – Specifications

onsemi MBRD835LT4G is a MBRD835LT4G from onsemi, part of the Schottky Barrier Diodes (SBD). It is designed for 35V 510mV@8A 8A TO-252-2(DPAK) Schottky Barrier Diodes (SBD) ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:

  • Reverse Leakage Current (Ir): 1.4mA@35V
  • Reverse Voltage (Vr): 35V
  • Forward Voltage (Vf@If): 510mV@8A
  • Average Rectified Current (Io): 8A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.438 grams.

Full Specifications of MBRD835LT4G

Model NumberMBRD835LT4G
Model Nameonsemi MBRD835LT4G
CategorySchottky Barrier Diodes (SBD)
Brandonsemi
Description35V 510mV@8A 8A TO-252-2(DPAK) Schottky Barrier Diodes (SBD) ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.438 grams / 0.01545 oz
Package / CaseTO-252-2(DPAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Reverse Leakage Current (Ir)1.4mA@35V
Reverse Voltage (Vr)35V
Forward Voltage (Vf@If)510mV@8A
Average Rectified Current (Io)8A

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