onsemi MJ11012G is a MJ11012G from onsemi, part of the Darlington Transistors. It is designed for 1000@5V,20A 60V NPN 30A 200W TO-204-2 Darlington Transistors ROHS. This product comes in a TO-204-2 package and is sold as Tray. Key features include:
- DC current gain (hFE@Vce,Ic): 1000@5V,20A
- Collector-emitter voltage (Vceo): 60V
- Transistor Type: NPN
- Transition frequency (fT): 4MHz
- Collector cut-off current (Icbo@Vcb): 1mA
- Collector Current (Ic): 30A
- Operating Temperature: -55℃~+200℃@(Tj)
- Power Dissipation (Pd): 200W
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@30A,300mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
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Full Specifications of MJ11012G
Model Number | MJ11012G |
Model Name | onsemi MJ11012G |
Category | Darlington Transistors |
Brand | onsemi |
Description | 1000@5V,20A 60V NPN 30A 200W TO-204-2 Darlington Transistors ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-204-2 |
Package / Arrange | Tray |
Battery | No |
ECCN | EAR99 |
DC current gain (hFE@Vce,Ic) | 1000@5V,20A |
Collector-emitter voltage (Vceo) | 60V |
Transistor Type | NPN |
Transition frequency (fT) | 4MHz |
Collector cut-off current (Icbo@Vcb) | 1mA |
Collector Current (Ic) | 30A |
Operating Temperature | -55℃~+200℃@(Tj) |
Power Dissipation (Pd) | 200W |
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 4V@30A,300mA |