onsemi MJ11016G is a MJ11016G from onsemi, part of the Darlington Transistors. It is designed for 1000@5V,20A 120V NPN 30A 200W TO-204(TO-3) Darlington Transistors ROHS. This product comes in a TO-204(TO-3) package and is sold as Tray. Key features include:
- DC current gain (hFE@Vce,Ic): 1000@5V,20A
- Collector-emitter voltage (Vceo): 120V
- Transistor Type: NPN
- Transition frequency (fT): 4MHz
- Collector cut-off current (Icbo@Vcb): 1mA
- Collector Current (Ic): 30A
- Operating Temperature: -55℃~+200℃@(Tj)
- Power Dissipation (Pd): 200W
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@30A,300mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 13 grams.
More on MJ11016G
Full Specifications of MJ11016G
| Model Number | MJ11016G |
| Model Name | onsemi MJ11016G |
| Category | Darlington Transistors |
| Brand | onsemi |
| Description | 1000@5V,20A 120V NPN 30A 200W TO-204(TO-3) Darlington Transistors ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 13.000 grams / 0.458562 oz |
| Package / Case | TO-204(TO-3) |
| Package / Arrange | Tray |
| Battery | No |
| ECCN | EAR99 |
| DC current gain (hFE@Vce,Ic) | 1000@5V,20A |
| Collector-emitter voltage (Vceo) | 120V |
| Transistor Type | NPN |
| Transition frequency (fT) | 4MHz |
| Collector cut-off current (Icbo@Vcb) | 1mA |
| Collector Current (Ic) | 30A |
| Operating Temperature | -55℃~+200℃@(Tj) |
| Power Dissipation (Pd) | 200W |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 4V@30A,300mA |