MJB5742T4G by onsemi – Specifications

onsemi MJB5742T4G is a MJB5742T4G from onsemi, part of the Darlington Transistors. It is designed for 200@5V,4A 400V NPN 8A 100W D2PAK Darlington Transistors ROHS. This product comes in a D2PAK package and is sold as Tape & Reel (TR). Key features include:

  • DC current gain (hFE@Vce,Ic): 200@5V,4A
  • Collector-emitter voltage (Vceo): 400V
  • Transistor Type: NPN
  • Collector Current (Ic): 8A
  • Power Dissipation (Pd): 100W
  • Operating Temperature: -65℃~+150℃@(Tj)
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 3V@8A,400mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.86 grams.

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Full Specifications of MJB5742T4G

Model NumberMJB5742T4G
Model Nameonsemi MJB5742T4G
CategoryDarlington Transistors
Brandonsemi
Description200@5V,4A 400V NPN 8A 100W D2PAK Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.860 grams / 0.06561 oz
Package / CaseD2PAK
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
DC current gain (hFE@Vce,Ic)200@5V,4A
Collector-emitter voltage (Vceo)400V
Transistor TypeNPN
Transition frequency (fT)-
Collector cut-off current (Icbo@Vcb)-
Collector Current (Ic)8A
Power Dissipation (Pd)100W
Operating Temperature-65℃~+150℃@(Tj)
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)3V@8A,400mA

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