onsemi MJD122G is a MJD122G from onsemi, part of the Darlington Transistors. It is designed for 100V 1000@4V,4A NPN 8A 20W TO-252-2(DPAK) Darlington Transistors ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tube-packed. Key features include:
- Collector-emitter voltage (Vceo): 100V
- DC current gain (hFE@Vce,Ic): 1000@4V,4A
- Transistor Type: NPN
- Transition frequency (fT): 4MHz
- Collector cut-off current (Icbo@Vcb): 10uA
- Collector Current (Ic): 8A
- Operating Temperature: -65℃~+150℃@(Tj)
- Power Dissipation (Pd): 20W
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@8A,80mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.613 grams.
More on MJD122G
Full Specifications of MJD122G
| Model Number | MJD122G |
| Model Name | onsemi MJD122G |
| Category | Darlington Transistors |
| Brand | onsemi |
| Description | 100V 1000@4V,4A NPN 8A 20W TO-252-2(DPAK) Darlington Transistors ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.613 grams / 0.021623 oz |
| Package / Case | TO-252-2(DPAK) |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Collector-emitter voltage (Vceo) | 100V |
| DC current gain (hFE@Vce,Ic) | 1000@4V,4A |
| Transistor Type | NPN |
| Transition frequency (fT) | 4MHz |
| Collector cut-off current (Icbo@Vcb) | 10uA |
| Collector Current (Ic) | 8A |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 20W |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 4V@8A,80mA |