onsemi MJD122T4G is a MJD122T4G from onsemi, part of the Darlington Transistors. It is designed for 100V 1000@4V,4A NPN 8A 1.75W TO-252-2(DPAK) Darlington Transistors ROHS. This product comes in a TO-252-2(DPAK) package and is sold as Tape & Reel (TR). Key features include:
- Collector-emitter voltage (Vceo): 100V
- DC current gain (hFE@Vce,Ic): 1000@4V,4A
- Transistor Type: NPN
- Transition frequency (fT): 4MHz
- Collector cut-off current (Icbo@Vcb): 10uA
- Collector Current (Ic): 8A
- Power Dissipation (Pd): 1.75W
- Operating Temperature: -65℃~+150℃@(Tj)
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@8A,80mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.454 grams.
More on MJD122T4G
Full Specifications of MJD122T4G
| Model Number | MJD122T4G |
| Model Name | onsemi MJD122T4G |
| Category | Darlington Transistors |
| Brand | onsemi |
| Description | 100V 1000@4V,4A NPN 8A 1.75W TO-252-2(DPAK) Darlington Transistors ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.454 grams / 0.016014 oz |
| Package / Case | TO-252-2(DPAK) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Collector-emitter voltage (Vceo) | 100V |
| DC current gain (hFE@Vce,Ic) | 1000@4V,4A |
| Transistor Type | NPN |
| Transition frequency (fT) | 4MHz |
| Collector cut-off current (Icbo@Vcb) | 10uA |
| Collector Current (Ic) | 8A |
| Power Dissipation (Pd) | 1.75W |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 4V@8A,80mA |