MJE800G by onsemi – Specifications

onsemi MJE800G is a MJE800G from onsemi, part of the Darlington Transistors. It is designed for 750@3V,1.5A 60V NPN 4A 40W TO-225-3 Darlington Transistors ROHS. This product comes in a TO-225-3 package and is sold as Box-packed. Key features include:

  • DC current gain (hFE@Vce,Ic): 750@3V,1.5A
  • Collector-emitter voltage (Vceo): 60V
  • Transistor Type: NPN
  • Collector cut-off current (Icbo@Vcb): 100uA
  • Collector Current (Ic): 4A
  • Power Dissipation (Pd): 40W
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): [email protected],30mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.774 grams.

Full Specifications of MJE800G

Model NumberMJE800G
Model Nameonsemi MJE800G
CategoryDarlington Transistors
Brandonsemi
Description750@3V,1.5A 60V NPN 4A 40W TO-225-3 Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.774 grams / 0.027302 oz
Package / CaseTO-225-3
Package / ArrangeBox-packed
BatteryNo
ECCNEAR99
DC current gain (hFE@Vce,Ic)750@3V,1.5A
Collector-emitter voltage (Vceo)60V
Transistor TypeNPN
Transition frequency (fT)-
Collector cut-off current (Icbo@Vcb)100uA
Collector Current (Ic)4A
Power Dissipation (Pd)40W
Operating Temperature-55℃~+150℃@(Tj)
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)[email protected],30mA

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