onsemi MMBF4393LT1G is a MMBF4393LT1G from onsemi, part of the JFETs. It is designed for 225mW 5mA@15V N-Channel 100Ω 30V SOT-23 JFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Input Capacitance (Ciss@Vds): 14pF@15V
- Total Device Dissipation (Pd): 225mW
- Drain Current (Idss@Vds,Vgs=0): 5mA@15V
- FET Type: N-Channel
- Static Drain-Source On Resistance (RDS(on)): 100Ω
- Gate-Source Breakdown Voltage (V(BR)GSS): 30V
- Gate-Source Cutoff Voltage (VGS(off)@ID): 500mV@10nA
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
More on MMBF4393LT1G
Full Specifications of MMBF4393LT1G
Model Number | MMBF4393LT1G |
Model Name | onsemi MMBF4393LT1G |
Category | JFETs |
Brand | onsemi |
Description | 225mW 5mA@15V N-Channel 100Ω 30V SOT-23 JFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.030 grams / 0.001058 oz |
Package / Case | SOT-23 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Input Capacitance (Ciss@Vds) | 14pF@15V |
Total Device Dissipation (Pd) | 225mW |
Drain Current (Idss@Vds,Vgs=0) | 5mA@15V |
FET Type | N-Channel |
Static Drain-Source On Resistance (RDS(on)) | 100Ω |
Gate-Source Breakdown Voltage (V(BR)GSS) | 30V |
Gate-Source Cutoff Voltage (VGS(off)@ID) | 500mV@10nA |
Operating Temperature | -55℃~+150℃@(Tj) |