onsemi MMBFJ111 is a MMBFJ111 from onsemi, part of the JFETs. It is designed for 350mW 20mA@15V N-Channel 30Ω 35V SOT-23 JFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- Total Device Dissipation (Pd): 350mW
- Drain Current (Idss@Vds,Vgs=0): 20mA@15V
- FET Type: N-Channel
- Static Drain-Source On Resistance (RDS(on)): 30Ω
- Gate-Source Breakdown Voltage (V(BR)GSS): 35V
- Gate-Source Cutoff Voltage (VGS(off)@ID): 3V@1uA
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
More on MMBFJ111
Full Specifications of MMBFJ111
| Model Number | MMBFJ111 |
| Model Name | onsemi MMBFJ111 |
| Category | JFETs |
| Brand | onsemi |
| Description | 350mW 20mA@15V N-Channel 30Ω 35V SOT-23 JFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.030 grams / 0.001058 oz |
| Package / Case | SOT-23 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Input Capacitance (Ciss@Vds) | - |
| Total Device Dissipation (Pd) | 350mW |
| Drain Current (Idss@Vds,Vgs=0) | 20mA@15V |
| FET Type | N-Channel |
| Static Drain-Source On Resistance (RDS(on)) | 30Ω |
| Gate-Source Breakdown Voltage (V(BR)GSS) | 35V |
| Gate-Source Cutoff Voltage (VGS(off)@ID) | 3V@1uA |
| Operating Temperature | -55℃~+150℃@(Tj) |