onsemi MMBFJ112 is a MMBFJ112 from onsemi, part of the JFETs. It is designed for 350mW 5mA@15V N-Channel 50Ω 35V SOT-23-3L JFETs ROHS. This product comes in a SOT-23-3L package and is sold as Tape & Reel (TR). Key features include:
- Total Device Dissipation (Pd): 350mW
- Drain Current (Idss@Vds,Vgs=0): 5mA@15V
- FET Type: N-Channel
- Static Drain-Source On Resistance (RDS(on)): 50Ω
- Gate-Source Breakdown Voltage (V(BR)GSS): 35V
- Gate-Source Cutoff Voltage (VGS(off)@ID): 1V@1uA
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
More on MMBFJ112
Full Specifications of MMBFJ112
| Model Number | MMBFJ112 |
| Model Name | onsemi MMBFJ112 |
| Category | JFETs |
| Brand | onsemi |
| Description | 350mW 5mA@15V N-Channel 50Ω 35V SOT-23-3L JFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.030 grams / 0.001058 oz |
| Package / Case | SOT-23-3L |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Input Capacitance (Ciss@Vds) | - |
| Total Device Dissipation (Pd) | 350mW |
| Drain Current (Idss@Vds,Vgs=0) | 5mA@15V |
| FET Type | N-Channel |
| Static Drain-Source On Resistance (RDS(on)) | 50Ω |
| Gate-Source Breakdown Voltage (V(BR)GSS) | 35V |
| Gate-Source Cutoff Voltage (VGS(off)@ID) | 1V@1uA |
| Operating Temperature | -55℃~+150℃@(Tj) |