MMBFJ175LT1G by onsemi – Specifications

onsemi MMBFJ175LT1G is a MMBFJ175LT1G from onsemi, part of the JFETs. It is designed for 225mW 7mA@15V P-Channel 125Ω 30V SOT-23 JFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Input Capacitance (Ciss@Vds): 11pF@10V
  • Total Device Dissipation (Pd): 225mW
  • Drain Current (Idss@Vds,Vgs=0): 7mA@15V
  • FET Type: P-Channel
  • Static Drain-Source On Resistance (RDS(on)): 125Ω
  • Gate-Source Breakdown Voltage (V(BR)GSS): 30V
  • Gate-Source Cutoff Voltage (VGS(off)@ID): 3V@10nA
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

Full Specifications of MMBFJ175LT1G

Model NumberMMBFJ175LT1G
Model Nameonsemi MMBFJ175LT1G
CategoryJFETs
Brandonsemi
Description225mW 7mA@15V P-Channel 125Ω 30V SOT-23 JFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Input Capacitance (Ciss@Vds)11pF@10V
Total Device Dissipation (Pd)225mW
Drain Current (Idss@Vds,Vgs=0)7mA@15V
FET TypeP-Channel
Static Drain-Source On Resistance (RDS(on))125Ω
Gate-Source Breakdown Voltage (V(BR)GSS)30V
Gate-Source Cutoff Voltage (VGS(off)@ID)3V@10nA
Operating Temperature-55℃~+150℃@(Tj)

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