MMBTA13LT1G by onsemi – Specifications

onsemi MMBTA13LT1G is a MMBTA13LT1G from onsemi, part of the Darlington Transistors. It is designed for 10000@5V,100mA 30V NPN 300mA 225mW SOT-23 Darlington Transistors ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • DC current gain (hFE@Vce,Ic): 10000@5V,100mA
  • Collector-emitter voltage (Vceo): 30V
  • Transistor Type: NPN
  • Transition frequency (fT): 125MHz
  • Collector cut-off current (Icbo@Vcb): 100nA
  • Collector Current (Ic): 300mA
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Power Dissipation (Pd): 225mW
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.5V@100mA,100uA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

Full Specifications of MMBTA13LT1G

Model NumberMMBTA13LT1G
Model Nameonsemi MMBTA13LT1G
CategoryDarlington Transistors
Brandonsemi
Description10000@5V,100mA 30V NPN 300mA 225mW SOT-23 Darlington Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
DC current gain (hFE@Vce,Ic)10000@5V,100mA
Collector-emitter voltage (Vceo)30V
Transistor TypeNPN
Transition frequency (fT)125MHz
Collector cut-off current (Icbo@Vcb)100nA
Collector Current (Ic)300mA
Operating Temperature-55℃~+150℃@(Tj)
Power Dissipation (Pd)225mW
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)1.5V@100mA,100uA

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