onsemi MMBTA13LT1G is a MMBTA13LT1G from onsemi, part of the Darlington Transistors. It is designed for 10000@5V,100mA 30V NPN 300mA 225mW SOT-23 Darlington Transistors ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:
- DC current gain (hFE@Vce,Ic): 10000@5V,100mA
- Collector-emitter voltage (Vceo): 30V
- Transistor Type: NPN
- Transition frequency (fT): 125MHz
- Collector cut-off current (Icbo@Vcb): 100nA
- Collector Current (Ic): 300mA
- Operating Temperature: -55℃~+150℃@(Tj)
- Power Dissipation (Pd): 225mW
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.5V@100mA,100uA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
More on MMBTA13LT1G
Full Specifications of MMBTA13LT1G
Model Number | MMBTA13LT1G |
Model Name | onsemi MMBTA13LT1G |
Category | Darlington Transistors |
Brand | onsemi |
Description | 10000@5V,100mA 30V NPN 300mA 225mW SOT-23 Darlington Transistors ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.030 grams / 0.001058 oz |
Package / Case | SOT-23 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
DC current gain (hFE@Vce,Ic) | 10000@5V,100mA |
Collector-emitter voltage (Vceo) | 30V |
Transistor Type | NPN |
Transition frequency (fT) | 125MHz |
Collector cut-off current (Icbo@Vcb) | 100nA |
Collector Current (Ic) | 300mA |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 225mW |
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) | 1.5V@100mA,100uA |