MMUN2211LT1G by onsemi – Specifications

onsemi MMUN2211LT1G is a MMUN2211LT1G from onsemi, part of the Digital Transistors. It is designed for 35@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V SOT-23 Digital Transistors ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • DC Current Gain (hFE@Ic,Vce): 35@5mA,10V
  • Transistor Type: 1 NPN - Pre Biased
  • Power Dissipation (Pd): 246mW
  • Collector Current (Ic): 100mA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

Full Specifications of MMUN2211LT1G

Model NumberMMUN2211LT1G
Model Nameonsemi MMUN2211LT1G
CategoryDigital Transistors
Brandonsemi
Description35@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V SOT-23 Digital Transistors ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
DC Current Gain (hFE@Ic,Vce)35@5mA,10V
Transistor Type1 NPN - Pre Biased
Power Dissipation (Pd)246mW
Collector Current (Ic)100mA
Collector-Emitter Breakdown Voltage (Vceo)50V

Compare onsemi - MMUN2211LT1G With Other 200 Models

Related Models - MMUN2211LT1G Alternative

Scroll to Top