onsemi MUN5315DW1T1G is a MUN5315DW1T1G from onsemi, part of the Digital Transistors. It is designed for 160@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V SC-88-6(SC-70-6) Digital Transistors ROHS. This product comes in a SC-88-6(SC-70-6) package and is sold as Tape & Reel (TR). Key features include:
- DC Current Gain (hFE@Ic,Vce): 160@5mA,10V
- Transistor Type: 1 NPN,1 PNP - Pre-Biased
- Power Dissipation (Pd): 250mW
- Collector Current (Ic): 100mA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on MUN5315DW1T1G
Full Specifications of MUN5315DW1T1G
| Model Number | MUN5315DW1T1G |
| Model Name | onsemi MUN5315DW1T1G |
| Category | Digital Transistors |
| Brand | onsemi |
| Description | 160@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V SC-88-6(SC-70-6) Digital Transistors ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | SC-88-6(SC-70-6) |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| DC Current Gain (hFE@Ic,Vce) | 160@5mA,10V |
| Transistor Type | 1 NPN,1 PNP - Pre-Biased |
| Power Dissipation (Pd) | 250mW |
| Collector Current (Ic) | 100mA |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
Compare onsemi - MUN5315DW1T1G With Other 27 Models
- MUN5315DW1T1G vs EMF5XV6T1G
- MUN5315DW1T1G vs EMG2DXV5T1G
- MUN5315DW1T1G vs NSBA123JDXV6T1G
- MUN5315DW1T1G vs NSVBC123JDXV6T1G
- MUN5315DW1T1G vs NSVBC144EDXV6T1G
- MUN5315DW1T1G vs NSVDTA115EET1G
- MUN5315DW1T1G vs EMC2DXV5T1
- MUN5315DW1T1G vs EMC4DXV5T1
- MUN5315DW1T1G vs EMC5DXV5T1
- MUN5315DW1T1G vs EMC3DXV5T1