NDB5060L by onsemi – Specifications

onsemi NDB5060L is a NDB5060L from onsemi, part of the MOSFETs. It is designed for 60V 26A 31mΩ@10V,13A 68W 1.4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS. This product comes in a TO-263AB package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 26A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 31mΩ@10V,13A
  • Power Dissipation (Pd): 68W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 75pF@30V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 840pF@30V
  • Total Gate Charge (Qg@Vgs): 17nC@5V
  • Operating Temperature: -65℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2 grams.

Full Specifications of NDB5060L

Model NumberNDB5060L
Model Nameonsemi NDB5060L
CategoryMOSFETs
Brandonsemi
Description60V 26A 31mΩ@10V,13A 68W 1.4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.000 grams / 0.070548 oz
Package / CaseTO-263AB
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)26A
Drain Source On Resistance (RDS(on)@Vgs,Id)31mΩ@10V,13A
Power Dissipation (Pd)68W
Gate Threshold Voltage (Vgs(th)@Id)1.4V@250uA
Reverse Transfer Capacitance (Crss@Vds)75pF@30V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)840pF@30V
Total Gate Charge (Qg@Vgs)17nC@5V
Operating Temperature-65℃~+175℃@(Tj)

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