onsemi NDB603AL is a NDB603AL from onsemi, part of the MOSFETs. It is designed for 30V 25A 22mΩ@25A,10V 50W 3V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@25A,10V
- Power Dissipation (Pd): 50W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.1nF@15V
- Total Gate Charge (Qg@Vgs): 40nC@10V
- Operating Temperature: -65℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NDB603AL
Full Specifications of NDB603AL
Model Number | NDB603AL |
Model Name | onsemi NDB603AL |
Category | MOSFETs |
Brand | onsemi |
Description | 30V 25A 22mΩ@25A,10V 50W 3V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | D2PAK(TO-263) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 25A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 22mΩ@25A,10V |
Power Dissipation (Pd) | 50W |
Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.1nF@15V |
Total Gate Charge (Qg@Vgs) | 40nC@10V |
Operating Temperature | -65℃~+175℃@(Tj) |