onsemi NDH8502P is a NDH8502P from onsemi, part of the MOSFETs. It is designed for 30V 2.2A 110mΩ@2.2A,10V 3V@250uA 2 P-Channel TSOP-8-3.30mm MOSFETs ROHS. This product comes in a TSOP-8-3.30mm package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 2.2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@2.2A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 2 P-Channel
- Input Capacitance (Ciss@Vds): 340pF@15V
- Total Gate Charge (Qg@Vgs): 14.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on NDH8502P
Full Specifications of NDH8502P
| Model Number | NDH8502P |
| Model Name | onsemi NDH8502P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 2.2A 110mΩ@2.2A,10V 3V@250uA 2 P-Channel TSOP-8-3.30mm MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | TSOP-8-3.30mm |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 2.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mΩ@2.2A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 2 P-Channel |
| Input Capacitance (Ciss@Vds) | 340pF@15V |
| Total Gate Charge (Qg@Vgs) | 14.5nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |