onsemi NDS0610-G is a NDS0610-G from onsemi, part of the MOSFETs. It is designed for 60V 120mA 10Ω@500mA,10V 360mW 3.5V@1mA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 120mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10Ω@500mA,10V
- Power Dissipation (Pd): 360mW
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@1mA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 79pF@25V
- Total Gate Charge (Qg@Vgs): 2.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.
More on NDS0610-G
Full Specifications of NDS0610-G
Model Number | NDS0610-G |
Model Name | onsemi NDS0610-G |
Category | MOSFETs |
Brand | onsemi |
Description | 60V 120mA 10Ω@500mA,10V 360mW 3.5V@1mA 1PCSPChannel SOT-23-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.030 grams / 0.001058 oz |
Package / Case | SOT-23-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 120mA |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 10Ω@500mA,10V |
Power Dissipation (Pd) | 360mW |
Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@1mA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 79pF@25V |
Total Gate Charge (Qg@Vgs) | 2.5nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |