NDS0610-G by onsemi – Specifications

onsemi NDS0610-G is a NDS0610-G from onsemi, part of the MOSFETs. It is designed for 60V 120mA 10Ω@500mA,10V 360mW 3.5V@1mA 1PCSPChannel SOT-23-3 MOSFETs ROHS. This product comes in a SOT-23-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10Ω@500mA,10V
  • Power Dissipation (Pd): 360mW
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@1mA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 79pF@25V
  • Total Gate Charge (Qg@Vgs): 2.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.03 grams.

Full Specifications of NDS0610-G

Model NumberNDS0610-G
Model Nameonsemi NDS0610-G
CategoryMOSFETs
Brandonsemi
Description60V 120mA 10Ω@500mA,10V 360mW 3.5V@1mA 1PCSPChannel SOT-23-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.030 grams / 0.001058 oz
Package / CaseSOT-23-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)120mA
Drain Source On Resistance (RDS(on)@Vgs,Id)10Ω@500mA,10V
Power Dissipation (Pd)360mW
Gate Threshold Voltage (Vgs(th)@Id)3.5V@1mA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)79pF@25V
Total Gate Charge (Qg@Vgs)2.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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